RM50N30DN
Rectron USA
Rectron USA
MOSFET N-CHANNEL 30V 50A 8DFN
$0.24
Available to order
Reference Price (USD)
1+
$0.24000
500+
$0.2376
1000+
$0.2352
1500+
$0.2328
2000+
$0.2304
2500+
$0.228
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover RM50N30DN, a versatile Transistors - FETs, MOSFETs - Single solution from Rectron USA, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 6.5mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.57W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN (3x3)
- Package / Case: 8-PowerWDFN
Related Products
Vishay Siliconix
SIJ188DP-T1-GE3
Vishay Siliconix
IRFP31N50LPBF
STMicroelectronics
STD6NF10T4
Texas Instruments
CSD19534KCS
Infineon Technologies
IRF100B202
STMicroelectronics
STWA40N95DK5
Vishay Siliconix
SI7454DDP-T1-GE3
Rohm Semiconductor
RV8L002SNHZGG2CR
Renesas Electronics America Inc
H5N5016PL-E
STMicroelectronics