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TK110E10PL,S1X

Toshiba Semiconductor and Storage
TK110E10PL,S1X Preview
Toshiba Semiconductor and Storage
X35 PB-F POWER MOSFET TRANSISTOR
$1.28
Available to order
Reference Price (USD)
1+
$1.28000
500+
$1.2672
1000+
$1.2544
1500+
$1.2416
2000+
$1.2288
2500+
$1.216
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 10.7mOhm @ 21A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 300µA
  • Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V
  • FET Feature: -
  • Power Dissipation (Max): 87W (Tc)
  • Operating Temperature: 175°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3

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