IRF5210PBF
Infineon Technologies
Infineon Technologies
MOSFET P-CH 100V 40A TO220AB
$2.87
Available to order
Reference Price (USD)
1+
$2.81000
10+
$2.55000
100+
$2.07870
500+
$1.64970
1,000+
$1.39230
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of IRF5210PBF, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, IRF5210PBF is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 60mOhm @ 24A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
Related Products
Infineon Technologies
BSZ0804LSATMA1
Alpha & Omega Semiconductor Inc.
AOD444
onsemi
NVHL020N090SC1
Infineon Technologies
BSP615S2L
Toshiba Semiconductor and Storage
TK12A55D(STA4,Q,M)
Vishay Siliconix
SI8817DB-T2-E1
Infineon Technologies
AUIRFS8407-7P
STMicroelectronics
STB16N90K5
Vishay Siliconix
SIHP6N80E-GE3
UnitedSiC