TK12A55D(STA4,Q,M)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 550V 12A TO220SIS
$2.52
Available to order
Reference Price (USD)
50+
$2.29500
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with TK12A55D(STA4,Q,M), a premium Transistors - FETs, MOSFETs - Single from Toshiba Semiconductor and Storage. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust TK12A55D(STA4,Q,M) for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 550 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 570mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 45W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
Related Products
Vishay Siliconix
SI8817DB-T2-E1
Infineon Technologies
AUIRFS8407-7P
STMicroelectronics
STB16N90K5
Vishay Siliconix
SIHP6N80E-GE3
UnitedSiC
UF3SC120040B7S
Nexperia USA Inc.
NXV40UNR
Renesas Electronics America Inc
UPA1872GR-9JG-E1-A
onsemi
FDC640P
Rectron USA
RM4N700S4
Alpha & Omega Semiconductor Inc.