SI8817DB-T2-E1
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 20V 4MICROFOOT
$0.49
Available to order
Reference Price (USD)
3,000+
$0.17493
6,000+
$0.16365
15,000+
$0.15236
30,000+
$0.14446
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
SI8817DB-T2-E1 by Vishay Siliconix is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, SI8817DB-T2-E1 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 76mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 8 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 4-Microfoot
- Package / Case: 4-XFBGA
Related Products
Infineon Technologies
AUIRFS8407-7P
STMicroelectronics
STB16N90K5
Vishay Siliconix
SIHP6N80E-GE3
UnitedSiC
UF3SC120040B7S
Nexperia USA Inc.
NXV40UNR
Renesas Electronics America Inc
UPA1872GR-9JG-E1-A
onsemi
FDC640P
Rectron USA
RM4N700S4
Alpha & Omega Semiconductor Inc.
AOI2N60
Fairchild Semiconductor