STQ1HN60K3-AP
STMicroelectronics
STMicroelectronics
MOSFET N-CH 600V 400MA TO92-3
$0.82
Available to order
Reference Price (USD)
2,000+
$0.35343
6,000+
$0.33165
10,000+
$0.32076
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Discover STQ1HN60K3-AP, a versatile Transistors - FETs, MOSFETs - Single solution from STMicroelectronics, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 8Ohm @ 600mA, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 3W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
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