TP65H050WS
Transphorm
Transphorm
GANFET N-CH 650V 34A TO247-3
$19.24
Available to order
Reference Price (USD)
1+
$16.19000
10+
$14.72000
30+
$13.61600
120+
$12.51200
270+
$11.40800
510+
$10.67200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with TP65H050WS, a high-quality Transistors - FETs, MOSFETs - Single from Transphorm. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, TP65H050WS provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: GaNFET (Cascode Gallium Nitride FET)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V
- Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V
- Vgs(th) (Max) @ Id: 4.8V @ 700µA
- Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 119W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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