G2R50MT33K
GeneSiC Semiconductor
GeneSiC Semiconductor
3300V 50M TO-247-4 SIC MOSFET
$325.24
Available to order
Reference Price (USD)
1+
$325.24000
500+
$321.9876
1000+
$318.7352
1500+
$315.4828
2000+
$312.2304
2500+
$308.978
Exquisite packaging
Discount
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Upgrade your electronic designs with G2R50MT33K by GeneSiC Semiconductor, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, G2R50MT33K ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 3300 V
- Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id: 3.5V @ 10mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: 340 nC @ 20 V
- Vgs (Max): +25V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 7301 pF @ 1000 V
- FET Feature: Standard
- Power Dissipation (Max): 536W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4
- Package / Case: TO-247-4
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