SIS888DN-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 150V 20.2A PPAK
$1.72
Available to order
Reference Price (USD)
3,000+
$0.77490
6,000+
$0.73852
15,000+
$0.71253
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose SIS888DN-T1-GE3 by Vishay Siliconix. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with SIS888DN-T1-GE3 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
- Rds On (Max) @ Id, Vgs: 58mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 4.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 75 V
- FET Feature: -
- Power Dissipation (Max): 52W (Tc)
- Operating Temperature: -55°C ~ 150°C (TA)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8S
- Package / Case: PowerPAK® 1212-8S
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