C3M0016120D
Wolfspeed, Inc.
Wolfspeed, Inc.
SICFET N-CH 1200V 115A TO247-3
$82.06
Available to order
Reference Price (USD)
1+
$82.06000
500+
$81.2394
1000+
$80.4188
1500+
$79.5982
2000+
$78.7776
2500+
$77.957
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose C3M0016120D by Wolfspeed, Inc.. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with C3M0016120D inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 22.3mOhm @ 75A, 15V
- Vgs(th) (Max) @ Id: 3.6V @ 23mA
- Gate Charge (Qg) (Max) @ Vgs: 207 nC @ 15 V
- Vgs (Max): +15V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 6085 pF @ 1000 V
- FET Feature: -
- Power Dissipation (Max): 556W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
Related Products
Taiwan Semiconductor Corporation
BSS123W
onsemi
FCH023N65S3-F155
STMicroelectronics
STD7N60DM2
IXYS
IXFX360N10T
Rohm Semiconductor
R6007END3TL1
Toshiba Semiconductor and Storage
TK2K2A60F,S4X
STMicroelectronics
STL90N3LLH6
Microchip Technology
APT10M25BVRG
Infineon Technologies
IPS050N03LG
Vishay Siliconix