FDS5670
onsemi
onsemi
MOSFET N-CH 60V 10A 8SOIC
$2.04
Available to order
Reference Price (USD)
2,500+
$0.88279
5,000+
$0.85196
12,500+
$0.83514
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with FDS5670, a reliable Transistors - FETs, MOSFETs - Single by onsemi. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, FDS5670 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
Vishay Siliconix
SQM50P04-09L_GE3
IXYS
IXTY32P05T
Infineon Technologies
IPB011N04LGATMA1
NXP USA Inc.
BUK7523-75A,127
Fairchild Semiconductor
SSU1N60BTU
Rohm Semiconductor
RD3G07BATTL1
Wolfspeed, Inc.
C3M0016120D
Taiwan Semiconductor Corporation
BSS123W
onsemi
FCH023N65S3-F155
STMicroelectronics