SQM50P04-09L_GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CHANNEL 40V 50A TO263
$2.73
Available to order
Reference Price (USD)
800+
$1.20965
1,600+
$1.11012
2,400+
$1.03356
5,600+
$0.99528
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover SQM50P04-09L_GE3, a versatile Transistors - FETs, MOSFETs - Single solution from Vishay Siliconix, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 9.4mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6045 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D²Pak)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
IXYS
IXTY32P05T
Infineon Technologies
IPB011N04LGATMA1
NXP USA Inc.
BUK7523-75A,127
Fairchild Semiconductor
SSU1N60BTU
Rohm Semiconductor
RD3G07BATTL1
Wolfspeed, Inc.
C3M0016120D
Taiwan Semiconductor Corporation
BSS123W
onsemi
FCH023N65S3-F155
STMicroelectronics
STD7N60DM2
IXYS