SIR872ADP-T1-RE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 150V 53.7A PPAK SO-8
$1.27
Available to order
Reference Price (USD)
3,000+
$1.21966
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with SIR872ADP-T1-RE3, a reliable Transistors - FETs, MOSFETs - Single by Vishay Siliconix. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, SIR872ADP-T1-RE3 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 53.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
- Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1286 pF @ 75 V
- FET Feature: -
- Power Dissipation (Max): 104W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
Related Products
onsemi
NTH4LN040N65S3H
IXYS
MKE38P600LB-TRR
Harris Corporation
RFP2N15
Renesas Electronics America Inc
2SK2111(0)-T1-AZ
Diodes Incorporated
DMT3006LFG-13
onsemi
NTD5C632NLT4G
Infineon Technologies
BSF885N03LQ3GXUMA1
Renesas Electronics America Inc
UPA2593T1H-T1-AT
Vishay Siliconix
SQJQ144AE-T1_GE3
Wolfspeed, Inc.