NTH4LN040N65S3H
onsemi
onsemi
NTH4LN040N65S3H
$11.10
Available to order
Reference Price (USD)
1+
$11.10000
500+
$10.989
1000+
$10.878
1500+
$10.767
2000+
$10.656
2500+
$10.545
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover NTH4LN040N65S3H, a versatile Transistors - FETs, MOSFETs - Single solution from onsemi, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 40mOhm @ 31A, 10V
- Vgs(th) (Max) @ Id: 4V @ 6.8mA
- Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 6513 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 379W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4
- Package / Case: TO-247-4
Related Products
IXYS
MKE38P600LB-TRR
Harris Corporation
RFP2N15
Renesas Electronics America Inc
2SK2111(0)-T1-AZ
Diodes Incorporated
DMT3006LFG-13
onsemi
NTD5C632NLT4G
Infineon Technologies
BSF885N03LQ3GXUMA1
Renesas Electronics America Inc
UPA2593T1H-T1-AT
Vishay Siliconix
SQJQ144AE-T1_GE3
Wolfspeed, Inc.
E3M0060065D
Renesas Electronics America Inc