NTD5C632NLT4G
onsemi
onsemi
T6 60V LL DPAK
$5.00
Available to order
Reference Price (USD)
1+
$5.00000
500+
$4.95
1000+
$4.9
1500+
$4.85
2000+
$4.8
2500+
$4.75
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with NTD5C632NLT4G, a high-quality Transistors - FETs, MOSFETs - Single from onsemi. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, NTD5C632NLT4G provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 155A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 4W (Ta), 115W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Infineon Technologies
BSF885N03LQ3GXUMA1
Renesas Electronics America Inc
UPA2593T1H-T1-AT
Vishay Siliconix
SQJQ144AE-T1_GE3
Wolfspeed, Inc.
E3M0060065D
Renesas Electronics America Inc
H5N3301LSTL-E
Vishay Siliconix
SI3453DV-T1-GE3
Renesas
2SK3455B-S17-AY
Nexperia USA Inc.
PSMNR90-50SLHAX
Diodes Incorporated
DMT36M1LPS-13
Infineon Technologies