SQJQ144AE-T1_GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 40V 575A PPAK 8 X 8
$2.90
Available to order
Reference Price (USD)
1+
$2.90000
500+
$2.871
1000+
$2.842
1500+
$2.813
2000+
$2.784
2500+
$2.755
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of SQJQ144AE-T1_GE3, a premium Transistors - FETs, MOSFETs - Single from Vishay Siliconix. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, SQJQ144AE-T1_GE3 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 575A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 0.9mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 9020 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 600W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 8 x 8
- Package / Case: PowerPAK® 8 x 8
Related Products
Wolfspeed, Inc.
E3M0060065D
Renesas Electronics America Inc
H5N3301LSTL-E
Vishay Siliconix
SI3453DV-T1-GE3
Renesas
2SK3455B-S17-AY
Nexperia USA Inc.
PSMNR90-50SLHAX
Diodes Incorporated
DMT36M1LPS-13
Infineon Technologies
IMZA65R107M1HXKSA1
Diodes Incorporated
DMN3025LFG-13
Diodes Incorporated
DMPH3010LPS-13
Vishay Siliconix