SIR846ADP-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 100V 60A PPAK SO-8
$2.37
Available to order
Reference Price (USD)
3,000+
$1.15547
6,000+
$1.11537
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of SIR846ADP-T1-GE3, a premium Transistors - FETs, MOSFETs - Single from Vishay Siliconix. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, SIR846ADP-T1-GE3 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 7.8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
Related Products
onsemi
FDMA908PZ
Alpha & Omega Semiconductor Inc.
AO6415
Fairchild Semiconductor
ISL9N302AP3
Infineon Technologies
BSC036NE7NS3GATMA1
Infineon Technologies
SPP11N60C3XKSA1
onsemi
NTLJF3117PTAG
Diodes Incorporated
DMN3110S-7
IXYS
IXFT140N10P
STMicroelectronics
STP6N95K5
IXYS