DMN3110S-7
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 30V 2.5A SOT-23
$0.61
Available to order
Reference Price (USD)
3,000+
$0.20460
6,000+
$0.19140
15,000+
$0.17820
30,000+
$0.16896
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with DMN3110S-7, a high-quality Transistors - FETs, MOSFETs - Single from Diodes Incorporated. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, DMN3110S-7 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 73mOhm @ 3.1mA, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 305.8 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 740mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
IXYS
IXFT140N10P
STMicroelectronics
STP6N95K5
IXYS
IXTP18P10T
Panjit International Inc.
PJF18N20_T0_00001
onsemi
NTHL095N65S3H
Vishay Siliconix
IRF840APBF
IXYS
IXFH16N80P
Infineon Technologies
BSC011N03LSATMA1
Fairchild Semiconductor
FQD6N60CTM
Diodes Incorporated