IXTP18P10T
IXYS
IXYS
MOSFET P-CH 100V 18A TO220AB
$2.71
Available to order
Reference Price (USD)
1+
$1.86000
50+
$1.50000
100+
$1.35000
500+
$1.05000
1,000+
$0.87000
2,500+
$0.84000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of IXTP18P10T, a premium Transistors - FETs, MOSFETs - Single from IXYS. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, IXTP18P10T is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 120mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
- Vgs (Max): ±15V
- Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
Related Products
Panjit International Inc.
PJF18N20_T0_00001
onsemi
NTHL095N65S3H
Vishay Siliconix
IRF840APBF
IXYS
IXFH16N80P
Infineon Technologies
BSC011N03LSATMA1
Fairchild Semiconductor
FQD6N60CTM
Diodes Incorporated
DI9952T
Infineon Technologies
IPW65R190E6
STMicroelectronics
SCTW35N65G2V
Infineon Technologies