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SIHB22N60ET1-GE3

Vishay Siliconix
SIHB22N60ET1-GE3 Preview
Vishay Siliconix
MOSFET N-CH 600V 21A TO263
$3.73
Available to order
Reference Price (USD)
800+
$2.24000
1,600+
$2.09920
2,400+
$2.00064
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V
  • FET Feature: -
  • Power Dissipation (Max): 227W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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