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SI2356DS-T1-GE3

Vishay Siliconix
SI2356DS-T1-GE3 Preview
Vishay Siliconix
MOSFET N-CH 40V 4.3A TO236
$0.42
Available to order
Reference Price (USD)
3,000+
$0.12677
6,000+
$0.11949
15,000+
$0.11221
30,000+
$0.10347
75,000+
$0.09983
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Rds On (Max) @ Id, Vgs: 51mOhm @ 3.2A, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 20 V
  • FET Feature: -
  • Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3

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