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IXTH68P20T

IXYS
IXTH68P20T Preview
IXYS
MOSFET P-CH 200V 68A TO247
$18.42
Available to order
Reference Price (USD)
1+
$12.61000
30+
$10.60067
120+
$9.74100
510+
$8.30851
1,020+
$8.02200
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 55mOhm @ 34A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
  • Vgs (Max): ±15V
  • Input Capacitance (Ciss) (Max) @ Vds: 33400 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 568W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 (IXTH)
  • Package / Case: TO-247-3

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