SIA456DJ-T3-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 200V 1.1A/2.6A PPAK
$0.44
Available to order
Reference Price (USD)
1+
$0.44055
500+
$0.4361445
1000+
$0.431739
1500+
$0.4273335
2000+
$0.422928
2500+
$0.4185225
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Vishay Siliconix presents SIA456DJ-T3-GE3, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, SIA456DJ-T3-GE3 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 2.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 1.38Ohm @ 750mA, 4.5V
- Vgs(th) (Max) @ Id: 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SC-70-6
- Package / Case: PowerPAK® SC-70-6
Related Products
Diodes Incorporated
DMN3024SFG-7
onsemi
NTTFS6H880NTAG
Renesas Electronics America Inc
RJK0358DPA-00#J0
Harris Corporation
RF1S45N03L
Rohm Semiconductor
R6002ENHTB1
Diodes Incorporated
DMN67D8LT-13
onsemi
NTMFS4931NT1G-IRH1
onsemi
NTMT125N65S3H
Infineon Technologies
IPB320P10LMATMA1
Fairchild Semiconductor