R6002ENHTB1
Rohm Semiconductor
Rohm Semiconductor
600V 1.7A SOP8, LOW-NOISE POWER
$1.25
Available to order
Reference Price (USD)
1+
$1.25000
500+
$1.2375
1000+
$1.225
1500+
$1.2125
2000+
$1.2
2500+
$1.1875
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with R6002ENHTB1 by Rohm Semiconductor, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, R6002ENHTB1 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
Diodes Incorporated
DMN67D8LT-13
onsemi
NTMFS4931NT1G-IRH1
onsemi
NTMT125N65S3H
Infineon Technologies
IPB320P10LMATMA1
Fairchild Semiconductor
FCP165N65S3R0
Yangzhou Yangjie Electronic Technology Co.,Ltd
YJJ09N03A-F2-0000HF
IXYS
IXFT50N60P3-TRL
Vishay Siliconix
SQ3493EV-T1_GE3
onsemi
NTLJS053N12MCLTAG
Diodes Incorporated