IPB320P10LMATMA1
Infineon Technologies
Infineon Technologies
TRENCH >=100V PG-TO263-3
$6.30
Available to order
Reference Price (USD)
1+
$6.30000
500+
$6.237
1000+
$6.174
1500+
$6.111
2000+
$6.048
2500+
$5.985
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IPB320P10LMATMA1 by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IPB320P10LMATMA1 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 63A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 32mOhm @ 54A, 10V
- Vgs(th) (Max) @ Id: 2V @ 5.55mA
- Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Fairchild Semiconductor
FCP165N65S3R0
Yangzhou Yangjie Electronic Technology Co.,Ltd
YJJ09N03A-F2-0000HF
IXYS
IXFT50N60P3-TRL
Vishay Siliconix
SQ3493EV-T1_GE3
onsemi
NTLJS053N12MCLTAG
Diodes Incorporated
DMTH8008SFGQ-13
Diodes Incorporated
DMTH8008LPS-13
Infineon Technologies
IAUC40N08S5L140ATMA1
Microchip Technology
APTM120DA30T1G
STMicroelectronics