NTTFS6H880NTAG
onsemi
onsemi
T8 80V U8FL
$0.32
Available to order
Reference Price (USD)
1+
$0.31645
500+
$0.3132855
1000+
$0.310121
1500+
$0.3069565
2000+
$0.303792
2500+
$0.3006275
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with NTTFS6H880NTAG, a reliable Transistors - FETs, MOSFETs - Single by onsemi. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, NTTFS6H880NTAG meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-WDFN (3.3x3.3)
- Package / Case: 8-PowerWDFN
Related Products
Renesas Electronics America Inc
RJK0358DPA-00#J0
Harris Corporation
RF1S45N03L
Rohm Semiconductor
R6002ENHTB1
Diodes Incorporated
DMN67D8LT-13
onsemi
NTMFS4931NT1G-IRH1
onsemi
NTMT125N65S3H
Infineon Technologies
IPB320P10LMATMA1
Fairchild Semiconductor
FCP165N65S3R0
Yangzhou Yangjie Electronic Technology Co.,Ltd
YJJ09N03A-F2-0000HF
IXYS