SCT2450KEHRC11
Rohm Semiconductor
Rohm Semiconductor
1200V, 10A, THD, SILICON-CARBIDE
$12.61
Available to order
Reference Price (USD)
1+
$12.61000
500+
$12.4839
1000+
$12.3578
1500+
$12.2317
2000+
$12.1056
2500+
$11.9795
Exquisite packaging
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Upgrade your electronic designs with SCT2450KEHRC11 by Rohm Semiconductor, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, SCT2450KEHRC11 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 585mOhm @ 3A, 18V
- Vgs(th) (Max) @ Id: 4V @ 900µA
- Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 18 V
- Vgs (Max): +22V, -6V
- Input Capacitance (Ciss) (Max) @ Vds: 463 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 85W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247N
- Package / Case: TO-247-3
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