RFW2N06RLE
Harris Corporation
Harris Corporation
N-CHANNEL POWER MOSFET
$1.66
Available to order
Reference Price (USD)
1+
$1.66000
500+
$1.6434
1000+
$1.6268
1500+
$1.6102
2000+
$1.5936
2500+
$1.577
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with RFW2N06RLE, a high-quality Transistors - FETs, MOSFETs - Single from Harris Corporation. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, RFW2N06RLE provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 200mOhm @ 2A, 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
- Vgs (Max): +10V, -5V
- Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.09W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: 4-DIP, Hexdip
- Package / Case: 4-DIP (0.300", 7.62mm)
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