JANSR2N7292
Harris Corporation
Harris Corporation
25A, 100V, 0.070 OHM, RAD HARD,
$376.25
Available to order
Reference Price (USD)
1+
$376.25000
500+
$372.4875
1000+
$368.725
1500+
$364.9625
2000+
$361.2
2500+
$357.4375
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover JANSR2N7292, a versatile Transistors - FETs, MOSFETs - Single solution from Harris Corporation, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 552 nC @ 20 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-254AA
- Package / Case: TO-254-3, TO-254AA
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