2SK1581-T1B-A
Renesas
Renesas
2SK1581-T1B-A - SWITCHING N-CHAN
$0.16
Available to order
Reference Price (USD)
1+
$0.16193
500+
$0.1603107
1000+
$0.1586914
1500+
$0.1570721
2000+
$0.1554528
2500+
$0.1538335
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of 2SK1581-T1B-A, a premium Transistors - FETs, MOSFETs - Single from Renesas. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, 2SK1581-T1B-A is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 16 V
- Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
- Rds On (Max) @ Id, Vgs: 5Ohm @ 1mA, 4V
- Vgs(th) (Max) @ Id: 1.6V @ 10µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 27 pF @ 3 V
- FET Feature: -
- Power Dissipation (Max): 200mW (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: SC-59
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Micro Commercial Co
MCAC85N06KY-TP
Harris Corporation
JANSR2N7292
UnitedSiC
UJ4C075023K3S
Harris Corporation
RF1S9630SM
Renesas Electronics America Inc
2SK3116(0)-Z-E1-AZ
Renesas Electronics America Inc
RJK0659DPA-00#J5A
Taiwan Semiconductor Corporation
TSM60NC390CP ROG
Renesas Electronics America Inc
2SK2499-S-AZ
Diodes Incorporated
DMP6023LFGQ-7
Renesas Electronics America Inc