RQA0008RXDQS#H1
Renesas
Renesas
RQA0008 - N-CHANNEL POWER MOSFET
$0.55
Available to order
Reference Price (USD)
1+
$0.54786
500+
$0.5423814
1000+
$0.5369028
1500+
$0.5314242
2000+
$0.5259456
2500+
$0.520467
Exquisite packaging
Discount
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Upgrade your electronic designs with RQA0008RXDQS#H1 by Renesas, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, RQA0008RXDQS#H1 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 16 V
- Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 800mV @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±5V
- Input Capacitance (Ciss) (Max) @ Vds: 44 pF @ 0 V
- FET Feature: -
- Power Dissipation (Max): 10W (Tc)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: UPAK
- Package / Case: TO-243AA
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