IMBG65R163M1HXTMA1
Infineon Technologies
Infineon Technologies
SILICON CARBIDE MOSFET PG-TO263-
$8.19
Available to order
Reference Price (USD)
1+
$8.19000
500+
$8.1081
1000+
$8.0262
1500+
$7.9443
2000+
$7.8624
2500+
$7.7805
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance IMBG65R163M1HXTMA1 from Infineon Technologies, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, IMBG65R163M1HXTMA1 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
Related Products
Diodes Incorporated
DMTH4014LFVWQ-13
Diodes Incorporated
DMT8008LSS-13
Nexperia USA Inc.
PMN37ENEX
Diodes Incorporated
DMT32M5LPS-13
Infineon Technologies
IAUT165N08S5N029ATMA1
Vishay Siliconix
SQJ431EP-T2_GE3
Harris Corporation
RFP12N18
Infineon Technologies
IPI100N12S305AKSA1
Diodes Incorporated
DMT8008LFG-7
onsemi