AONS660A70F
Alpha & Omega Semiconductor Inc.
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 700V 1.7A/9.6A 8DFN
$0.85
Available to order
Reference Price (USD)
1+
$0.85200
500+
$0.84348
1000+
$0.83496
1500+
$0.82644
2000+
$0.81792
2500+
$0.8094
Exquisite packaging
Discount
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AONS660A70F by Alpha & Omega Semiconductor Inc. is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, AONS660A70F ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 700 V
- Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta), 9.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 660mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 4.1W (Ta), 138W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN-EP (5x6)
- Package / Case: 8-PowerVDFN
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