RJK0601DPN-E0#T2
Renesas
Renesas
RJK0601DPN - N-CHANNEL MOSFET 60
$3.27
Available to order
Reference Price (USD)
1+
$3.26560
500+
$3.232944
1000+
$3.200288
1500+
$3.167632
2000+
$3.134976
2500+
$3.10232
Exquisite packaging
Discount
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Renesas presents RJK0601DPN-E0#T2, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, RJK0601DPN-E0#T2 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 110A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3.1mOhm @ 55A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-220ABS
- Package / Case: TO-220-3
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