UF3SC120009K4S
UnitedSiC
UnitedSiC
SICFET N-CH 1200V 120A TO247-4
$86.77
Available to order
Reference Price (USD)
1+
$86.77000
500+
$85.9023
1000+
$85.0346
1500+
$84.1669
2000+
$83.2992
2500+
$82.4315
Exquisite packaging
Discount
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Experience the power of UF3SC120009K4S, a premium Transistors - FETs, MOSFETs - Single from UnitedSiC. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, UF3SC120009K4S is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Cascode SiCJFET)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V
- Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 12V
- Vgs(th) (Max) @ Id: 6V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 15 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 8512 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 789W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4
- Package / Case: TO-247-4
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