R6576KNZ4C13
Rohm Semiconductor
Rohm Semiconductor
650V 76A TO-247, HIGH-SPEED SWIT
$16.05
Available to order
Reference Price (USD)
1+
$16.05000
500+
$15.8895
1000+
$15.729
1500+
$15.5685
2000+
$15.408
2500+
$15.2475
Exquisite packaging
Discount
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Rohm Semiconductor presents R6576KNZ4C13, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, R6576KNZ4C13 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 46mOhm @ 44.4A, 10V
- Vgs(th) (Max) @ Id: 5V @ 2.96mA
- Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 735W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247G
- Package / Case: TO-247-3
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