PMFPB8032XP,115
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET P-CH 20V 2.7A HUSON6
$0.60
Available to order
Reference Price (USD)
3,000+
$0.29520
6,000+
$0.27760
15,000+
$0.26880
30,000+
$0.26400
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with PMFPB8032XP,115, a reliable Transistors - FETs, MOSFETs - Single by Nexperia USA Inc.. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, PMFPB8032XP,115 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V
- Rds On (Max) @ Id, Vgs: 102mOhm @ 2.7A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 485mW (Ta), 6.25W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-HUSON (2x2)
- Package / Case: 6-UFDFN Exposed Pad
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