R6012JNXC7G
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 600V 12A TO220FM
$4.19
Available to order
Reference Price (USD)
1+
$4.19000
500+
$4.1481
1000+
$4.1062
1500+
$4.0643
2000+
$4.0224
2500+
$3.9805
Exquisite packaging
Discount
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Optimize your electronic systems with R6012JNXC7G, a high-quality Transistors - FETs, MOSFETs - Single from Rohm Semiconductor. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, R6012JNXC7G provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 390mOhm @ 6A, 15V
- Vgs(th) (Max) @ Id: 7V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FM
- Package / Case: TO-220-3 Full Pack
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