GPIHV30SB5L
GaNPower
GaNPower
GANFET N-CH 1200V 30A TO263-5L
$22.00
Available to order
Reference Price (USD)
1+
$22.00000
500+
$21.78
1000+
$21.56
1500+
$21.34
2000+
$21.12
2500+
$20.9
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover GPIHV30SB5L, a versatile Transistors - FETs, MOSFETs - Single solution from GaNPower, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 30A
- Drive Voltage (Max Rds On, Min Rds On): 6V
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 1.4V @ 3.5mA
- Gate Charge (Qg) (Max) @ Vgs: 8.25 nC @ 6 V
- Vgs (Max): +7.5V, -12V
- Input Capacitance (Ciss) (Max) @ Vds: 236 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
Related Products
STMicroelectronics
STB6NK90ZT4
Renesas Electronics America Inc
BB503CCS-TL-H
IXYS
IXTP140P05T
Motorola
NTD6N40-001-MO
Rohm Semiconductor
R6012JNXC7G
onsemi
FDPF4N60NZ
Vishay Siliconix
SI7848BDP-T1-GE3
Nexperia USA Inc.
PMH550UPEH
Alpha & Omega Semiconductor Inc.
AON6220
Vishay Siliconix