PSMN5R0-80PS,127
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 80V 100A TO220AB
$3.33
Available to order
Reference Price (USD)
1+
$1.91000
50+
$1.54000
100+
$1.38600
500+
$1.07800
1,000+
$0.89320
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose PSMN5R0-80PS,127 by Nexperia USA Inc.. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with PSMN5R0-80PS,127 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 4.7mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6793 pF @ 12 V
- FET Feature: -
- Power Dissipation (Max): 270W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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