Shopping cart

Subtotal: $0.00

FDN360P

onsemi
FDN360P Preview
onsemi
MOSFET P-CH 30V 2A SUPERSOT3
$0.53
Available to order
Reference Price (USD)
3,000+
$0.13467
6,000+
$0.12651
15,000+
$0.11835
30,000+
$0.10855
75,000+
$0.10447
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 298 pF @ 15 V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3

Related Products

Nexperia USA Inc.

NX3020NAKW,115

Microchip Technology

APT10035JLL

Nexperia USA Inc.

BUK9635-55A,118

Vishay Siliconix

SI7153DN-T1-GE3

Alpha & Omega Semiconductor Inc.

AOTF22N50L

Vishay Siliconix

SIHP7N60E-GE3

Infineon Technologies

IPB60R090CFD7ATMA1

Toshiba Semiconductor and Storage

TK3A65DA(STA4,QM)

STMicroelectronics

STFI8N80K5

Rectron USA

RM78N100LD

Top