SSM10N954L,EFF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
COMMON-DRAIN NCH MOSFET, 12V, 13
$1.45
Available to order
Reference Price (USD)
1+
$1.45000
500+
$1.4355
1000+
$1.421
1500+
$1.4065
2000+
$1.392
2500+
$1.3775
Exquisite packaging
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Discover SSM10N954L,EFF, a versatile Transistors - FETs, MOSFETs - Single solution from Toshiba Semiconductor and Storage, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 2.75mOhm @ 6A, 4.5V
- Vgs(th) (Max) @ Id: 1.4V @ 1.11mA
- Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 800mW (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: TCSPAC-153001
- Package / Case: 10-SMD, No Lead
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