IPD65R950CFDATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 3.9A TO252-3
$0.87
Available to order
Reference Price (USD)
2,500+
$0.52483
Exquisite packaging
Discount
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Boost your electronic applications with IPD65R950CFDATMA1, a reliable Transistors - FETs, MOSFETs - Single by Infineon Technologies. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IPD65R950CFDATMA1 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 36.7W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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