PMXB75UPEZ
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET P-CH 20V 2.9A DFN1010D-3
$0.43
Available to order
Reference Price (USD)
5,000+
$0.09858
10,000+
$0.09091
25,000+
$0.08579
50,000+
$0.07812
125,000+
$0.07673
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with PMXB75UPEZ, a high-quality Transistors - FETs, MOSFETs - Single from Nexperia USA Inc.. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, PMXB75UPEZ provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
- Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 317mW (Ta), 8.33W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN1010D-3
- Package / Case: 3-XDFN Exposed Pad
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