NTE4151PT1G
onsemi
onsemi
MOSFET P-CH 20V 760MA SC89-3
$0.46
Available to order
Reference Price (USD)
3,000+
$0.10282
6,000+
$0.09294
15,000+
$0.08307
30,000+
$0.07813
75,000+
$0.06973
150,000+
$0.06726
Exquisite packaging
Discount
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Experience the power of NTE4151PT1G, a premium Transistors - FETs, MOSFETs - Single from onsemi. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, NTE4151PT1G is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 760mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 360mOhm @ 350mA, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
- Vgs (Max): ±6V
- Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 5 V
- FET Feature: -
- Power Dissipation (Max): 313mW (Tj)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-89-3
- Package / Case: SC-89, SOT-490
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