SI4122DY-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 40V 27.2A 8SO
$2.46
Available to order
Reference Price (USD)
2,500+
$0.99158
5,000+
$0.95717
Exquisite packaging
Discount
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Boost your electronic applications with SI4122DY-T1-GE3, a reliable Transistors - FETs, MOSFETs - Single by Vishay Siliconix. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, SI4122DY-T1-GE3 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 27.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 6W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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