PMPB95ENEAX
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 80V 2.8A DFN2020MD-6
$0.48
Available to order
Reference Price (USD)
3,000+
$0.19257
6,000+
$0.18173
15,000+
$0.17090
30,000+
$0.16331
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with PMPB95ENEAX, a reliable Transistors - FETs, MOSFETs - Single by Nexperia USA Inc.. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, PMPB95ENEAX meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 105mOhm @ 2.8A, 10V
- Vgs(th) (Max) @ Id: 2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 504 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta), 15.6W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN2020MD-6
- Package / Case: 6-UDFN Exposed Pad
Related Products
Infineon Technologies
IPI90R1K2C3XKSA1
EPC
EPC2302
Vishay Siliconix
SQD45P03-12_GE3
Diodes Incorporated
DMP2066LSS-13
Harris Corporation
IRFP150
Infineon Technologies
IPB027N10N5ATMA1
onsemi
NVMFS5C604NLAFT1G
Toshiba Semiconductor and Storage
SSM3K36MFV,L3F
Rohm Semiconductor
R6004ENJTL
GeneSiC Semiconductor