IRFP150
Harris Corporation
Harris Corporation
MOSFET N-CH 100V 41A TO247-3
$1.40
Available to order
Reference Price (USD)
1+
$1.40000
500+
$1.386
1000+
$1.372
1500+
$1.358
2000+
$1.344
2500+
$1.33
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
IRFP150 by Harris Corporation is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, IRFP150 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 55mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 230W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AC
- Package / Case: TO-247-3
Related Products
Infineon Technologies
IPB027N10N5ATMA1
onsemi
NVMFS5C604NLAFT1G
Toshiba Semiconductor and Storage
SSM3K36MFV,L3F
Rohm Semiconductor
R6004ENJTL
GeneSiC Semiconductor
GA20JT12-263
Fairchild Semiconductor
FQI3N30TU
Microchip Technology
VN10KN3-G-P002
Infineon Technologies
IAUC100N08S5N043ATMA1
onsemi
MCH3477-TL-H
IXYS