SSM3K36MFV,L3F
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 20V 500MA VESM
$0.41
Available to order
Reference Price (USD)
8,000+
$0.06300
16,000+
$0.05600
24,000+
$0.05250
56,000+
$0.04900
Exquisite packaging
Discount
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Toshiba Semiconductor and Storage presents SSM3K36MFV,L3F, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, SSM3K36MFV,L3F delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 5V
- Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 1.23 nC @ 4 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 150mW (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: VESM
- Package / Case: SOT-723
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