GA20JT12-263
GeneSiC Semiconductor
GeneSiC Semiconductor
TRANS SJT 1200V 45A D2PAK
$38.13
Available to order
Reference Price (USD)
1+
$36.64000
10+
$33.89100
50+
$31.14260
100+
$28.94430
250+
$26.56284
Exquisite packaging
Discount
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Boost your electronic applications with GA20JT12-263, a reliable Transistors - FETs, MOSFETs - Single by GeneSiC Semiconductor. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, GA20JT12-263 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: -
- Technology: SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 60mOhm @ 20A
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: 3091 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 282W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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